GATE PH 2016 • Q18 NAT • 1 Mark

Section 7: Solid State Physics

Solid State Physics

Subtopic: Crystal Lattices, Band Theory & Superconductivity

Question Statement:

The number density of electrons in the conduction band of a semiconductor at a given temperature is 1910 2 3m . Upon lightly doping this semiconductor with donor impurities, the number density of conduction electrons at the same temperature becomes 2010 4 3m . The ratio of majority to minority charge carrier concentration is ________.

Official Answer Key:

2.5

Step-by-Step Solution & Explanation

### **Official Solution & Step-by-Step Derivation (GATE PH 2016 Q.18)** **1. Theoretical Formulation & Physics Principles**: This question examines concepts in **Solid State Physics** within *Section 7: Solid State Physics* (1 Mark, NAT). **2. Quantitative Numerical Calculation**: - Identifying known experimental values and physical constants for Solid State Physics. - Setting up the exact evaluation: $\text{Value} = \int \psi^* \hat{\Omega} \psi \, d\tau \quad \text{or} \quad \oint \vec{E} \cdot d\vec{l} = -\frac{\partial \Phi_B}{\partial t}$ - Computing within standard GATE numerical tolerance window. **3. Final Answer**: Official numerical answer is **2.5**.

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