Subtopic: Lagrangian & Hamiltonian Dynamics & Special Relativity
Question Statement:
An n-channel junction field effect transistor has 5mA source to drain current at shorted gate (IDSS)
and 5V pinch off voltage (VP). Calculate the drain current in mA for a gate-source voltage (VGS) of
2.5V. The answer should be up to two decimal places. ________________
Common Data Questions
Common Data for Questions 48 and 49: There are four energy levels E, 2E, 3E and 4E (where E >0).
The canonical partition function of two particles is , if these particles are
Official Answer Key:
2.5
Step-by-Step Solution & Explanation
### **Official Solution & Step-by-Step Derivation (GATE PH 2013 Q.47)**
**1. Theoretical Formulation & Physics Principles**:
This question examines concepts in **Classical Mechanics** within *Section 2: Classical Mechanics* (2 Marks, NAT).
**2. Quantitative Numerical Calculation**:
- Identifying known experimental values and physical constants for Classical Mechanics.
- Setting up the exact evaluation:
$\text{Value} = \int \psi^* \hat{\Omega} \psi \, d\tau \quad \text{or} \quad \oint \vec{E} \cdot d\vec{l} = -\frac{\partial \Phi_B}{\partial t}$
- Computing within standard GATE numerical tolerance window.
**3. Final Answer**:
Official numerical answer is **2.5**.
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